Optical anisotropy of InAs submonolayer quantum wells in a „311... GaAs matrix
نویسندگان
چکیده
The in-plane optical anisotropy which comes from the heavy-hole and the light-hole transitions in InAs submonolayers inserted in a ~311!-oriented GaAs matrix is studied by reflectance-difference spectroscopy ~RDS!. The steplike density of states obtained from RDS demonstrates that the ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1 3-ML InAs. The degree of anisotropy is found to be independent of the layer coverage, and is within the intrinsic anisotropy of ~311!-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs submonolayer grown on a ~311! GaAs surface. @S0163-1829~97!08835-8#
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